PART |
Description |
Maker |
IDT70V7288S07 IDT70V7288L15PFI |
HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS 64K X 16 DUAL-PORT SRAM, 15 ns, PQFP100
|
Integrated Device Technology, Inc.
|
GS71216TP GS71216TP-10 GS71216TP-10I GS71216TP-8 G |
10ns 64K x 16 1Mb asynchronous SRAM 8ns 64K x 16 1Mb asynchronous SRAM
|
GSI[GSI Technology]
|
IS61WV6416DALL/DALS IS61WV6416DBLL/DBLS |
64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
HYS72D32000GU-7-A HYS64D32000GU-7-A HYS72D64020GU- |
256MB (32Mx64) PC2100 1-bank 512MB (64Mx72) PC2100 2-bank 512MB (64Mx64) PC2100 2-bank 512MB (64Mx72) PC1600 2-bank 256MB (32Mx72) PC1600 1-bank End-of-Life 512MB (64Mx64) PC1600 2-bank 12MB的(64Mx64)PC1600 2银行 256MB (32Mx72) PC2100 1-bank 56MB的(32Mx72)PC2100 1银行
|
Infineon Technologies AG
|
AM27C512-15F6 AM27C512-120PC AM27C512-70DI ADVANCE |
64K X 8 UVPROM, 120 ns, CDIP28 64K X 8 OTPROM, 90 ns, PDIP28 64K X 8 UVPROM, 55 ns, CDIP28 64K X 8 UVPROM, 90 ns, CDIP28 64K X 8 UVPROM, 70 ns, CDIP28 IC 集成电路 512 Kilobit (64 K x 8-Bit) CMOS EPROM
|
ADVANCED MICRO DEVICES INC SPANSION LLC Rochester Electronics, LLC AMD
|
GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100 64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100 117MHz 11ns 64K x 32 2M synchronous burst SRAM 66MHz 18ns 64K x 32 2M synchronous burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM 138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
ASC-3.3S ASC-12S |
30W Ul t raminiature Modular Swi tching Power Suppl ies
|
Astrodyne Corporation
|
HYS72D16500GR-7-A HYS72D32501GR-8-A |
256MB (32Mx72) PC1600 1-bank DDR SDRAM Modules - 128MB (16Mx72) PC2100 1-bank
|
Infineon
|
M2V64S20BTP M2V64S20BTP-10 M2V64S20BTP-10L M2V64S2 |
64M bit Synchronous DRAM 4-BANK x 2097152-WORD x 8-BIT 4-BANK x 1048576-WORD x 16-BIT 4-BANK x 4194304-WORD x 4-BIT From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CY27H512-30JC CY27H512-30WC CY27H512-35HC CY27H512 |
64K x 8 High-Speed CMOS EPROM 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 25 ns, PDSO28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, PDSO28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 30 ns, PDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 55 ns, CDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, CDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CQCC32 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32 64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 70 ns, CQCC32 64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDSO28 CAP SM CER 2200PFD 50V 10% X7R 0805
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
HYS64V8220GU HYS72V8220GU HYS72V4200GU HYSV4200GU |
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 3.3 4米64/72-Bit一银行内存模块3.3 8米64/72-Bit 2银行内存模块 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 8M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 From old datasheet system
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|